? ? thyristor module maximum ratings approx net weight:480g grade parameter parameter parameter parameter symbol pdt/PDH20012 pdt/pdh20016 unit repetitive peak off-state voltage v drm 1200 1600 non repetitive peak off-state voltage v dsm 1300 1700 v repetitive peak reverse voltage v rrm 1200 1600 non repetitive peak reverse voltage v rsm 1300 1700 v parameter parameter parameter parameter conditions conditions conditions conditions max rated max rated max rated max rated value value value value unit average rectified output current i o(av) 50hz half sine wave condition tc=75 c 200 a rms on-state current i t(rms) 314 a surge on-state current i tsm 50 hz half sine wave,1pulse non-repetitive 4000 a i squared t i 2 t 2msec to 10msec 80000 a 2 s critical rate of turned-on current di/dt v d =2/3v drm , i tm =2 ? i o , tj=125 c i g =300ma, di g /dt=0.2a/ s 100 a/ s peak gate power p gm 5 w average gate power p g(av) 1 w peak gate current i gm 2 a peak gate voltage v gm 10 v peak gate reverse voltage v rgm 5 v operating junctiontemperature range tjw -40 to +125 c storage temperature range tstg -40 to +125 c isoration voltage viso base plate to terminals, ac1min 2500 v case mounting m6 screw 2.5 to 3.5 mounting torque terminals ftor m8 screw 9.0 to 10.0 n ? m value per 1 arm features * isolated base * dual thyristors or thyristor and diode cascaded circuit * high surge capability * ul recognized, file no. e187184 typical applications * rectified for general use pdt20012 pdt2001 6 pdt20012 pdt2001 6 pdt20012 pdt2001 6 pdt20012 pdt2001 6 PDH20012 pdh2001 6 PDH20012 pdh2001 6 PDH20012 pdh2001 6 PDH20012 pdh2001 6 outline drawing 200a / 1200 to 1600v ? pdt pdh
? ? electrical ? thermal characteristics maximum value. characteristics symbol test conditions min. typ. max. unit peak off-state current i dm v dm = v drm, tj= 125 c 80 ma peak reverse current i rm v rm = v rrm, tj= 125 c 80 ma peak forward voltage v tm i tm = 600a, tj=25 c 1.28 v tj=-40 c 300 tj=25 c 150 gate current to trigger i gt v d =6v,i t =1a tj=125 c 80 ma tj=-40 c 5 tj=25 c 3 gate voltage to trigger v gt v d =6v,i t =1a tj=125 c 2 v gate non-trigger voltage v gd v d =2/3v drm tj=125 c 0.25 v critical rate of rise of off-state voltage dv/dt v d =2/3v drm tj=125 c 500 v/ s turn-off time tq i tm =i o ,v d =2/3v drm dv/dt=20v/ s, v r =100v -di/dt=20a/ s, tj=125 c 100 s turn-on time tgt 6 s delay time td 2 s rise time tr v d =2/3v drm tj=125 c i g =300ma, di g /dt=0.2a/ s 4 s latching current i l tj=25 c 150 ma holding current i h tj=25 c 100 rth(j-c) junction to case 0.2 thermal resistance rth(c-f) base plate to heat sink with thermal compound 0.1 c/w value per 1arm
? ? pdt/pdh2001x outline drawing (dimensions in mm) pdt pdh
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